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PD - 91574BIRG4PH50UUltra Fast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighterVCE(on) typ. = 2.78VG parameter distribution and higher efficiency than previous generations@VGE = 15V, IC = 24AE Optimized for power conversion; SMPS, UPS and welding n-channel Industry standard TO-247AC packageBenefits Higher switching frequency capability than competitive IGBTs Highest efficiency available Much lower conduction losses than MOSFETs More efficient than short circuit rated IGBTsTO-247ACAbsolute Maximum RatingsParameter Max. UnitsVCES Collector-to-Emitter Breakdown Voltage 1200 VIC @ TC = 25C Continuous Collector