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PD - 93874IRGC100B120KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 2.2V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE150mm Wafer Rugged Transient Performance Excellent Current Sharing in Parallel OperationElectrical Characteristics (Wafer Form)Parameter Description Guaranteed (min, max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 1.12V min, 1.29V max IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Collector-to-Emitter Breakdown Voltage 1200V min TJ = 25C, ICES = 1mA, VGE = 0VVGE(th) Gate Threshold Voltage 4.4V min, 6.0V max VGE =