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PD - 93873IRGC100B120UBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 3.1V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientUltraFast IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE150mm Wafer Rugged Transient Performance Excellent Current Sharing in Parallel OperationElectrical Characteristics (Wafer Form)Parameter Description Guaranteed (min, max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 1.43V min, 1.64V max IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 1200V min TJ = 25C, ICES = 1mA, VGE = 0VVGE(th) Gate Threshold Voltage 4.4V min, 6.0V max VGE = VCE ,