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PD - 93866AIRGC15B120KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=15A Low VCE(on)VCE(on) typ.=2.46V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE150mm Wafer Rugged Transient Performance Excellent Current Sharing in Parallel OperationElectrical Characteristics (Wafer Form)Parameter Description Guaranteed (min, max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 1.85V min, 2.3V max IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 1200V min TJ = 25C, ICES = 125A, VGE = 0VVGE(th) Gate Threshold Voltage 4.4V min, 6.0V max VGE = V