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IRLZ44, SiHLZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.028RoHS* RDS(on) Specified at VGS = 4 V and 5 VQg (Max.) (nC) 66 COMPLIANT 175 C Operating TemperatureQgs (nC) 12 Fast SwitchingQgd (nC) 43Configuration Single Ease of Paralleling Simple Drive RequirementsD Compliant to RoHS Directive 2002/95/ECTO-220ABDESCRIPTIONThird generation Power MOSFETs from Vishay provide theGdesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness. SD The TO-220AB package is universally preferred for allG Scommercial-industrial applications at power dissipationN-Channel MOSFET levels to approximately 50 W. The low thermal resistanceand low package cost