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IXZ4DF12N100 RF Power MOSFET & DRIVER 1000 Volts Driver / MOSFET Combination 12 A DEIC-515 Driver combined with a DE375-102N12A MOSFET 0.7 Ohms Gate driver matched to MOSFET Features Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power cycling capability IXYS advanced Z-MOS process Low RDS(on) Very low insertion inductance (

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ixz4df12n100.pdf Проектирование, MOSFET, Мощность

ixz4df12n100.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

ixz4df12n100.pdf База данных, Инновации, ИМС, Транзисторы

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