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SEMICONDUCTOR KRC660U~KRC664UEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.1 5DIM MILLIMETERS_Simplify Circuit Design. A 2.00 + 0.202 _A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D_B1 1.25 + 0.1High Packing Density.C 0.65D 0.2+0.10/-0.05G 0-0.1EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW)_H 0.9 + 0.1T 0.15+0.1/-0.05T54CGR1Q1 Q2B1. Q1 IN (BASE)2. Q , Q COMMON (EMITTER)1 23. Q2 IN (BASE)4. Q2 OUT (COLLECTOR)5. Q1 OUT (COLLECTOR)E1 2 3USVMAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITCHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 50 V PC *Collector Power Dissipation 200 mWVCEOCollector-Emitter Voltage 50 V TjJunct
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krc660u-krc664u.pdf Проектирование, MOSFET, Мощность
krc660u-krc664u.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
krc660u-krc664u.pdf База данных, Инновации, ИМС, Транзисторы



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