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MMBTA92TRANSISTOR(PNP)SOT-23 FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING:2D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -300 mA PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 RJA Thermal Resistance, junction to Ambient 410 /mW ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -300 VIC= -100A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -300 VEmitter-base breakdown voltage V(BR)EBO -5 VIE= -100A, IC=0 Collector cut-off current ICBO VCB=-200V,