Скачать даташит для p3055ldg:

P3055LDGN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID90m @VGS = 10V25V 12ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C12IDContinuous Drain CurrentTC= 100 C8 AIDM45Pulsed Drain Current1EASAvalanche Energy L=0.1mH 60 mJTC= 25 C48PDPower Dissipation WTC= 100C20Tj, TstgOperating Junction & Storage Temperature Range -55 to 150CTL275Lead Temperature (1/16 from case for 10 sec.)THERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Case RqJC 3Junction-to-Ambient RqJA 75 C / WCase-to-Heatsink RqCS 11Pulse width limited by maximum junction temperature.REV 1.0 1 2014/5/19P3055LDGN-Channel Logic Level Enhancement M

Ключевые слова - ALL TRANSISTORS DATASHEET

 p3055ldg.pdf Проектирование, MOSFET, Мощность

 p3055ldg.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 p3055ldg.pdf База данных, Инновации, ИМС, Транзисторы