Скачать даташит для p3055llg:

P3055LLGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25V 72m @VGS = 10V 6A SOT- 223ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS20 VTA = 25 C6IDContinuous Drain CurrentTA = 70 C3.3AIDM21Pulsed Drain Current2IASAvalanche Current 12Avalanche Energy EASL = 0.1mH 7.5 mJTA = 25 C3PDPower Dissipation WTA = 70 C1.1Operating Junction & Storage Temperature Range TJ, TSTG-55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Case RqJc 12C / WJunction-to-Ambient RqJA 421Pulse width limited by maximum junction temperature.2Limited by package.Ver 1.0 1 2012/4/12P3055LLGN-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS (TJ = 25