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PH1955LN-channel TrenchMOS logic level FETRev. 02 25 February 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and benefits Low conduction losses due to low Suitable for thermally demanding on-state resistance environments due to 175 C rating Suitable for logic level gate drive sources1.3 Applications 12 V and 24 V loads General purpose power switching DC-to-DC convertors Motors, lamps and solenoids1.4 Quick reference dataTable 1. Quick referenceSymbol Parameter Conditions Min Typ Max UnitVDS drain-source voltage Tj 25 C; Tj 175 C - - 55 VID drain current Tmb =25