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7516 Central Industrial DrivePPC INC.Riviera Beach, FL 33404PH: 561-842-0305PPNGZ52F120AFax: 561-845-7813PPNHZ52F120AFeatures Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistanceTO-258 Reverse polarity available upon request: PPNH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (PPNHZ52F120A only)1200 Volts52 Amps3.2 Volts vce(sat)N-CHANNELINSULATED GATE BIPOLARTRANSISTORMaximum Ratings @ 25C (unless otherwise specified)DESCRIPTION SYMBOL MAX. UNITCollector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) BVCES 1200 Volts@ TJ 25CCollector-to-Gate Breakdown Voltage @ TJ 25C, RGS= 1 M BVCGR 1200 VoltsContinuous Gate-to-Emitter Voltage VGES +/-20