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PT441030V N-Channel Enhancement Mode MOSFETVDS= 30V RDS(ON), Vgs@10V, Ids@12A = 10.5m RDS(ON), Vgs@4.5V, Ids@12A = 15m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Package Dimensions D D D D8 7 6 51 2 3 4S S S GMillimeter Millimeter REF. Min. Max. Min. Max. REF. A 5.80 6.20 M 0.10 0.25 B 4.80 5.00 H 0.35 0.49 C 3.80 4.00 L 1.35 1.75 D 0 8 J 0.375 REF. E 0.40 0.90 K 45 F 0.19 0.25 G 1.27 TYP. Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 30 DSV Gate-Source Voltage V 20 GSContinuous Drain Current ID 12 A Pulsed Drain Current I 48 DMTA = 25oC 2.5 Maximum Power Dissipation PD W TA = 75oC