Скачать даташит для pt8205:

PT820520V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@3.4A 46m RDS(ON), Vgs@4.V, Ids@4.3A 30mFeatures Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions SOT-163Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 1.10 MAX. L 0.45 REF. A1 0 0.10 L1 0.60 REF. A2 0.70 1.00 0 10 c b 0.12 REF. 0.30 0.50 D 2.70 3.10 e 0.95 REF. E 2.60 3.00 e1 1.90 REF. E1 1.40 1.80 Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit UnitDrain-Source Voltage VDS 20V Gate-Source Voltage VGS 12Continuous Drain Current ID 4A Pulsed Drain Current 1) IDM 25TA = 25oC 1.4Maximum Power Dissipation PD W TA = 7