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Preliminary Datasheet RQK0603CGDQA R07DS0307EJ0500(Previous: REJ03G1277-0400)Silicon N Channel MOS FET Rev.5.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 212 m typ (VGS = 10 V, ID = 1 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)3D3G 1. Source2 2. Gate1 3. Drain2S1Note: Marking is CG. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 60 VGate to source voltage VGSS 20 VDrain current ID 2 ADrain peak current ID(Pulse) Note1 5 ABody - drain diode reverse drain current IDR 2 AChannel dissipation Pch Note2 0.8 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. When using the gla