Скачать даташит для r07ds0310ej_rqk0606kgd:

Preliminary Datasheet RQK0606KGDQA R07DS0310EJ0200(Previous: REJ03G1497-0100)Silicon N Channel MOS FET Rev.2.00Power Switching Mar 28, 2011Features Low on-resistance RDS(on) = 173 m typ.(at VGS = 4.5 V, ID = 0.8 A) Low drive current High speed switching VDSS 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK) 3D321. SourceG12. Gate3. Drain2S1Notes: Marking is KG. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 60 VGate to source voltage VGSS 12 VDrain current ID 1.5 ADrain peak current ID(pulse) Note1 6 ABody - drain diode reverse drain current IDR 1.5 AChannel dissipation Pch Note2 0.8 WChannel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s