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Preliminary Datasheet RJK6024DPE R07DS0424EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 06, 2011Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. SourceG4. Drain123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 600 VGate to source voltage VGSS 30 VDrain current ID 0.4 ADrain peak current ID (pulse)Note1 0.6 ABody-drain diode reverse drain current IDR 0.4 ABody-drain diode reverse drain peak current IDR (pulse)Note1 0.6 AChannel dissipation Pch Note2 20 WChannel to case thermal impedance ch-c 6.25 C/W Channel temperature Tch 150 C Storage temperature Tstg