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Preliminary Datasheet RJL5014DPK R07DS0436EJ0200(Previous: REJ03G1798-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Jun 14, 2011Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.32 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1. Gate2. Drain (Flange)G3. Source12S3Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 500 VGate to source voltage VGSS 30 VDrain current ID 19 ADrain peak current ID (pulse)Note1 57 ABody-drain diode reverse drain current IDR 19 ABody-drain diode reverse drain peak current IDR (pulse)Note1 57 AAvalanche current IAPNote3 4 AAvalanche energy EARNote3 0.88 mJChannel dissipation Pch Note