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Preliminary Datasheet RJL5015DPK REJ03G1912-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 27, 2010Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.23 typ. (at ID = 11 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1. Gate2. Drain (Flange)G3. Source12S3Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 500 VGate to source voltage VGSS 30 VDrain current ID 22 ADrain peak current ID (pulse)Note1 66 ABody-drain diode reverse drain current IDR 22 ABody-drain diode reverse drain peak current IDR (pulse)Note1 66 AAvalanche current IAPNote3 7 AAvalanche energy EARNote3 2.7 mJChannel dissipation Pch Note2 150 WChannel to case thermal