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Preliminary Datasheet RJK6024DPD REJ03G1936-0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 01, 2010Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source124. Drain3SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 600 VGate to source voltage VGSS 30 VDrain current ID 0.4 ADrain peak current ID(pulse)Note1 0.6 ABody-drain diode reverse drain current IDR 0.4 ABody-drain diode reverse drain peak current IDR(pulse)Note1 0.6 AChannel dissipation Pch Note2 27.2 WChannel to case thermal impedance ch-c 4.58 C/W Channel temperature Tch 150 C Storage temperature Tstg