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Preliminary Datasheet RJK6024DP3-A0 R07DS1106EJ0100600 V - 0.4 A - MOS FET Rev.1.00High Speed Power Switching Aug 23, 2013Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSP0004ZB-A(Package name: SOT-223)D41. Gate2. DrainG3 3. Source24. Drain1SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 600 VGate to source voltage VGSS 30 VDrain current ID 0.4 ADrain peak current ID (pulse)Note1 0.6 ABody-drain diode reverse drain current IDR 0.4 ABody-drain diode reverse drain peak current IDR (pulse)Note1 0.6 ANote2Channel dissipation Pch 1.04 WChannel to case thermal impedance ch-c 120 C/W Channel temperature Tch 150 C Storage temperature Tstg