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Preliminary Datasheet RJL5012DPP-M0 R07DS0419EJ0100Silicon N Channel MOS FET Rev.1.00High Speed Power Switching May 26, 2011Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1. Gate2. DrainG3. Source123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 500 VGate to source voltage VGSS 30 VDrain current IDNote4 12 ADrain peak current ID (pulse)Note1 36 ABody-drain diode reverse drain current IDR 12 ABody-drain diode reverse drain peak current IDR (pulse)Note1 36 AAvalanche current IAPNote3 3 AAvalanche energy EARNote3 0.5 mJChannel dissipation Pch Note2 30 WChannel to case thermal i