Скачать даташит для rmw280n03:

Data Sheet4.5V Drive Nch MOSFETRMW280N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET PSOP8(8) (7) (6) (5)Features0~0.11) High Power package(PSOP8).1pin mark2) High-speed switching,Low On-resistance. (1) (2) (3) (4)0.220.40.93) Low voltage drive(4.5V drive).1.275.0 ApplicationSwitching Packaging specifications Inner circuitPackage Taping(8) (7) (6) (5)TypeCode TBBasic ordering unit (pieces) 2500RMW280N03 (1) Source(2) Source2(3) Source(4) Gate1(5) Drain Absolute maximum ratings (Ta = 25C) (6) Drain(7) DrainParameter Symbol Limits Unit(1) (2) (3) (4)(8) DrainDrain-source voltage VDSS 30 V1 ESD PROTECTION DIODE2 BODY DIODEGate-source voltage VGSS 20 VContinuous ID 28 ADrain currentPulsed IDP *1 112 AContinuous IS 2.5 ASource current(