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RQ6E030ATDatasheetPch -30V -3.0A Middle Power MOSFETlOutlinel TSMT6VDSS-30VRDS(on)(Max.) 91m ID 3.0A PD1.25W lInner circuitllFeaturesl1) Low on - resistance.2) Small Surface Mount Package (TSMT6).3) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbossed PackingTape Reel size (mm) 180lApplicationl Tape width (mm) 8TypeSwitching Basic ordering unit (pcs) 3000 Taping code TCR Marking JSlAbsolute maximum ratings (Ta = 25C)lParameter Symbol Value UnitVDSSDrain - Source voltage -30 VIDContinuous drain current 3.0 AID,pulse*2Pulsed drain current 12 AVGSSGate - Source voltage 20 VEAS*3Avalanche energy, single pulse 3.3 mJIAS*3Avalanche current -3.0 APD*4Power di

Ключевые слова - ALL TRANSISTORS DATASHEET

 rq6e030at.pdf Проектирование, MOSFET, Мощность

 rq6e030at.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 rq6e030at.pdf База данных, Инновации, ИМС, Транзисторы