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Si1304BDLVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.270 at VGS = 4.5 V 0.90 TrenchFET Power MOSFET30 1.1 100 % Rg Tested0.385 at VGS = 2.5 V 0.75 Compliant to RoHS Directive 2002/95/ECSC-70 (3-LEADS)G 1DMarking Code3DKF XXLot Traceabilityand Date CodeS 2GPart # CodeTop ViewSOrdering Information: Si1304BDL-T1-E3 (Lead (Pb)-free) Si1304BDL-T1-GE3 (Lead (Pb)-free and Halogen-free)N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VGate-Source Voltage VGS 12TC = 25 C 0.90TC = 70 C 0.71Continuous Drain Current (TJ = 150 C) IDTA = 25 C 0.85b, cTA = 70 C 0.68b, c APulsed Drain Current IDM