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New ProductSi1308EDLVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)c Qg (Typ.) 100 % Rg Tested0.132 at VGS = 10 V 1.5 Typical ESD Performance 1800 V30 0.144 at VGS = 4.5 V 1.4 1.4 nC Material categorization:For definitions of compliance please see0.185 at VGS = 2.5 V 1.3www.vishay.com/doc?99912APPLICATIONSSOT-323SC-70 (3-LEADS) Smart Phones, Tablet PCs- DC/DC ConvertersG1 - Boost Converters- Load Switch, OVP Switch3 DDS 2GTop ViewSi1308EDL (KG)** Marking CodeSOrdering Information:N-Channel MOSFETSi1308EDL-T1-GE3 (Lead (Pb)-free and Halogen-free)ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVDSDrain-Source Voltage 30VVGSGate-Source Voltage 12TC = 25 C1.4