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Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 4.688 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage 800V Continuous Drain Current (TC=25 ) 1.5IDAContinuous Drain Current (TC=100 ) 0.91IDM Drain Current-Pulsed 8O A_ VGS Gate-to-Source VoltageV2EAS Single Pulsed Avalanche Energy 216mJOIAR Avalanche Current 1 1.5AOEAR Repetitive Avalanche Energy 31 mJOdv/dt Peak Diode Recovery dv/dt 3 2.0V/nsOTotal Power Dissipation (TC=25 ) 30WPDLinear Derating Factor 0.24W/ Operating Junction and- 5