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ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit120 VCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCES 100 VCollector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 VCollector Current IC 4 ACollector Peak Current ICM 7 ABase Current IB 1 A OPower Dissipation at TA = 25 C PD 1.25 mW OPower Dissipation at TC = 25 C PD 36 mWOOperating and Storage Temperature Range TStg - 65 to + 150 C OCharacteristics at Ta = 25 C Parameter Symbol Min. Max. UnitDC Current Gain at VCE = 1 V, IC = 500 mA hFE 100 260 - at VCE = 1 V, IC = 2 A hFE 15 - - at VCE = 2 V, IC = 1 A hFE 100 260 - at VCE = 5 V, IC = 10 mA hFE 15 - - Collector Base Cutoff Curren