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SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS : 100V High ruggedness ID : 70A Low RDS(ON) (Typ 7.1m)@VGS=10V RDS(ON) : 7.1m@VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m@VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 Application: Li Battery Protect Board, S(1,2,3) D Synchronous Rectification, Inverter TO-251/TO-252/TO-220: 1.Gate 2.Drain 3.Source DFN5*6: 4.Gate 5,6,7,8.Drain 1,2,3.Source G General Description This power MOSFET is produced with advanced technology of SAMWIN. S This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sal