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UMH33NDatasheetNPN 400mA 20V Complex Digital Transistors (Bias Resistor Built-in Transistors) For Muting.lOutline UMT6Parameter Tr1 and Tr2(6) (5) VCEO20V (4) (1) (2) VEBO40V (3) IC400mAUMH33N SOT-353 (SC-88) R12.2kWlFeatures1) Built-In Biasing Resistors2) Two DTC923TUB chips in one package.3) High Breakdown Voltage of Emitter to Base BVEBO is Min. 40V at IE=50mA4) Low Output ON Resistance. Ron is Typ. 0.6W at VI=5V5) Built-in bias resistors enable the configuration of lInner circuitCollector Base Emitter an inverter circuit without connecting external(6) (5) (4) input resistors (see equivalent circuit).6) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects.7) Lead Free/RoHS
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umh33n.pdf Проектирование, MOSFET, Мощность
umh33n.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
umh33n.pdf База данных, Инновации, ИМС, Транзисторы



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