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US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT5Schottky Barrier DIODE 2.0 Features 1.31) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching. 3) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol : U35 Applications Switching Packaging specifications Equivalent circuitPackage Taping(5) (4)Code TRTypeBasic ordering unit (pieces) 30002US5U351(1)Gate(2)Source(1) (2) (3) (3)Anode(4)Cathode1 ESD protection diode(5)Drain2 Body diode1/5 0.2Max.US5U35 Transistor Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitDrain-source voltage V VDSS -45Gate-source voltage VGSS 20 VContinuous I 0.7 ADDrain current1Pulsed I