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Product specificationXP151A13A0MR-G Power MOSFET GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. FEATURESAPPLICATIONS Low On-State Resistance : Rds(on) = 0.1@ Vgs = 4.5V Notebook PCs : Rds(on) = 0.14@ Vgs = 2.5V : Rds(on) = 0.25@ Vgs = 1.5V Cellular and portable phones Ultra High-Speed Switching On-board power supplies Gate Protect Diode Built-in Driving Voltage : 1.5VLi-ion battery systems N-Channel Power MOSFET DMOS Structure Small Package : SOT-23Environmentally Friendly : EU RoHS Compliant, Pb