Справочник транзисторов. 2SC2364

 

Биполярный транзистор 2SC2364 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC2364

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 80 W

Макcимально допустимое напряжение коллектор-база (Ucb): 200 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 175 °C

Ёмкость коллекторного перехода (Cc): 1.8 pf

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO218

Аналоги (замена) для 2SC2364

 

 

2SC2364 Datasheet (PDF)

4.1. 2sc2362k.pdf Size:55K _sanyo

2SC2364
2SC2364

Ordering number:ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit:mm 2003B [2SA1016, 1016K/2SC2362, 2362K] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Emitter ( ) : 2SA1016, 1016K 2 : Collecor 3 : Base Specifications 1.3 1.3 SANYO : NP Absolute Maximum Ratings at Ta = 25?C 2SA1016K,

4.2. 2sa1016 2sc2362.pdf Size:55K _sanyo

2SC2364
2SC2364

Ordering number:ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit:mm 2003B [2SA1016, 1016K/2SC2362, 2362K] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Emitter ( ) : 2SA1016, 1016K 2 : Collecor 3 : Base Specifications 1.3 1.3 SANYO : NP Absolute Maximum Ratings at Ta = 25?C 2SA1016K,

 4.3. 2sc2369.pdf Size:32K _nec

2SC2364

4.4. 2sc2368.pdf Size:32K _nec

2SC2364

 4.5. 2sc2367.pdf Size:97K _advanced-semi

2SC2364

2SC2367 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI 2SC2367 is Designed for general purpose and small signal PACKAGE STYLE .100 4L PILL amplifier and oscillator applications up to 6.0 GHz. FEATURES INCLUDE:  High frequency 8.0 GH  Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS: IC 80 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 580 mW @ TA = 25 °C TJ

4.6. 2sc2365.pdf Size:332K _jmnic

2SC2364
2SC2364

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2365 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For use in switch-mode CTV supply systems PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Col

4.7. 2sc2361.pdf Size:56K _inchange_semiconductor

2SC2364
2SC2364

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2361 DESCRIPTION · ·With TO-220C package ·Complement to type 2SA1123 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIO

4.8. 2sc2365.pdf Size:113K _inchange_semiconductor

2SC2364
2SC2364

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2365 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ For use in switch-mode CTV supply systems PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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