DATA SHEETSILICON POWER TRANSISTOR2SD1588NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Mold package that does not require an insulating board orinsulation bushing Large current capacity in small dimension: IC(DC) = 7 A Low collector saturation voltage: VCE(sat) = 0.5 V MAX. (@5 A) Id

Product Specification www.jmnic.comSilicon Power Transistors 2SD1588 DESCRIPTION With TO-220Fa package Complement to type 2SB1097 Low speed switching APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 emitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARA

isc Silicon NPN Power Transistor 2SD1588DESCRIPTIONLarge Current Capacity- I = 7ACLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Complement to Type 2SB1097Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power