Биполярный транзистор 2SD1906Q - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1906Q
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 90 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 20 MHz
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO218
2SD1906Q Datasheet (PDF)
2sd1906.pdf
Ordering number:EN2266APNP/NPN Epitaxial Planar Type Silicon Transistors2SB1270/2SD1906High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2049Bapplications.[2SB1270/2SD1906]Features Suitable for sets whose height is restricted. Low collec
2sd1907.pdf
Ordering number:EN2267BPNP/NPN Epitaxial Planar Type Silicon Transistors2SB1271/2SD1907High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2049Bapplications.[2SB1271/2SD1907]Features Suitable for sets whose height is restricted. Low collec
2sd1908.pdf
Ordering number:EN3971NPN Epitaxial Planar Silicon Transistor2SD1908CRT Display Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Especially suited for use in high-definition CRT2049Cdisplay : VCC=6 to 12V.[2SD1908] Wide ASO and highly resistant to breakdown.10.24.51.31.20.80.41 2 31 : Base2 : Coll
2sd1903.pdf
Ordering number:EN2263APNP/NPN Epitaxial Planar Silicon Transistors2SB1267/2SD190330V/8A High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters and other general high-current switching.2049B[2SB1267/2SD1903]Features Suitable for sets whose height is restricted. Low collector to emitte
2sd1904.pdf
Ordering number:EN2264BPNP/NPN Epitaxial Planar Silicon Transistors2SB1268/2SD1904High-Current Switching ApplicatonsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2049Bapplications.[2SB1268/2SD1904]Features Suitable for sets whose height is restricted. Low collector to
2sd1902.pdf
Ordering number:EN2538APNP/NPN Triple Diffused Planar Type Silicon Transistors2SB1266/2SD1902AF Power Amplifier ApplicationsFeatures Package Dimensions Suitable for sets whose heighit is restricted.unit:mm Wide ASO (adoption of MBIT process).2049B High reliability.[2SB1266/2SD1902]E : EmitterC : Collector( ) : 2SB1266B : BaseSANYO : TO-220MFSpecification
2sd1905.pdf
Ordering number:EN2265APNP/NPN Epitaxial Planar Type Silicon Transistors2SB1269/2SD1905High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2049Bapplications.[2SB1269/2SD1905]Features Suitable for sets whose height is restricted. Low collec
2sd1902.pdf
SMD Type TransistorsNPN Transistors2SD1902TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High reliablity Complementary to 2SB12660.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltag
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050