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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1912DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOWide Area of Safe OperationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(

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Ordering number : ENN2246B2SB1274/2SD1913PNP/NPN Epitaxial Planar Silicon Transistors2SB1274/2SD191360V/3A Low-FrequencyPower Amplifier ApplicationsApplicationsPackage Dimensions General power amplifier.unit : mm2041A[2SB1274/2SD1913]4.510.02.8Features3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High br

2SD2211 / 2SD1918 / 2SD1857ATransistorsPower Transistor (160V , 1.5A)2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm)1) High breakdown voltage.(BVCEO = 160V)2) Low collector output capacitance.2SD22114.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency.(fT = 80MHZ)(2)4) Complements the 2SB1275 / 2SB1236A.(3)(1) Base(Gate)

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

Power Transistor (160V , 1.5A) 2SD1918 / 2SD1857A Features Dimensions (Unit : mm) 1) High breakdown voltage.(BVCEO=160V) 2SD19182) Low collector output capacitance. 5.5 1.5 (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 0.94) Complements the 2SB1275. C0.50.8Min.1.5Absolute maximum ratings (Ta = 25C) 2.59.5Parameter Symbol Limits Unit

2SD1910 Silicon Diffused Power TransistorGENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in horizontal deflection circuites of colour television receiversQUICK REFERENCE DATA TO-3PFMSYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VCo

Silicon Diffused Power Transistor2SD1911GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in horizontal deflection circuites of colour television receiversQUICK REFERENCE DATA TO-3PFMSYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VC

SMD Type TransistorsNPN Transistors2SD1918TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High breakdown voltage. Low collector output capacitance.0.127 High transition frequency+0.10.80-0.1max Complementary to 2SB1275+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Max

isc Silicon NPN Power Transistor 2SD1913DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1274Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SD1910DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1918DESCRIPTIONHigh fTfT=80MHz(TYP)High Collector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOExcellent linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drivers,LED driver,Power supplyABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SD1911DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA