BDY58R - Даташиты. Аналоги. Основные параметры

BDY57 BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY57 80 VCEO Collector-Emitter Voltage V BDY58 125 BDY57 120 VCBO Collector-Base Voltage V BDY58 160 BDY57 VEBO Emitter-Base Voltage 10 V BDY58 BDY57 IC Collector Current

BDY57 BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY57 80 VCEO Collector-Emitter Voltage V BDY58 125 BDY57 120 VCBO Collector-Base Voltage V BDY58 160 BDY57 VEBO Emitter-Base Voltage 10 V BDY58 BDY57 IC Collector Current

BDY58S Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 125V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

BDY58C Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 125V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

BDY58A Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 125V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

BDY58B Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 125V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

SPTECH Product Specification SPTECH Silicon NPN Power Transistor BDY58 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 125V(Min) CEO(SUS) High Power Dissipation Low Collector Saturation Voltage APPLICATIONS LF signal power amplification. High current fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Base Voltage 160 V C

isc Silicon NPN Power Transistor BDY58S DESCRIPTION Collector-Emitter Sustaining Voltage- V = 125V(Min) CEO(SUS) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS LF signal power amplification. High current fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

isc Silicon NPN Power Transistor BDY58 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 125V(Min) CEO(SUS) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS LF signal power amplification. High current fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 DESCRIPTION With TO-3 package High current capability Fast switching speed APPLICATIONS For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum rati