Биполярный транзистор BU931
Даташит. Аналоги
Наименование производителя: BU931
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 175
W
Макcимально допустимое напряжение коллектор-база (Ucb): 500
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 15
A
Предельная температура PN-перехода (Tj): 175
°C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора:
TO3
- подбор биполярного транзистора по параметрам
BU931
Datasheet (PDF)
..1. Size:97K st
bu931 bu931p bu931pfi.pdf 

BU931/BU931PBU931PFIHIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGESTO-3APPLICATIONS1 HIGH RUGGEDNESS ELECTRONIC2IGNITIONS33221 1TO-218 ISOWATT218INTERNAL SCHEMATIC DIAGRAMfor TO-3Emitter: pin 2Base: pin1Collector: tabABSOLUTE MAXIMUM RATINGSSymbol Pa
..2. Size:208K inchange semiconductor
bu931.pdf 

isc Silicon NPN Power Transistor BU931DESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Em
0.1. Size:654K st
bu931t.pdf 

BU931T Automotive-grade high voltage ignition coil driver NPN power Darlington transistor Datasheet - production data Features AEC-Q101 qualified Very rugged Bipolar technology TAB High operating junction temperature Applications 3 High ruggedness electronic ignitions 21Description TO-220This is a high voltage power Darlington transistor developed
0.2. Size:77K st
bu931-bub931t.pdf 

BU931TBUB931T HIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263)POWER PACKAGE IN TUBE (NO SUFFIX)OR IN TAPE & REEL (SUFFIX T4)APPLICATIONS332 HIGH RUGGEDNESS ELECTRONIC11IGNITIONSTO-220 D2PAKTO-263INTERNAL SCHEMATIC DIAG
0.3. Size:213K inchange semiconductor
bu931t.pdf 

isc Silicon NPN Power Transistor BU931TDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV E
0.4. Size:217K inchange semiconductor
bu931rpfi.pdf 

isc Silicon NPN Power Transistor BU931RPFIDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEO
0.5. Size:132K inchange semiconductor
bu931r bu932r.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU931R BU932R DESCRIPTION With TO-3 package DARLINGTON APPLICATIONS Automotive ignition applications Inverters circuits for motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBO
0.6. Size:216K inchange semiconductor
bu931p.pdf 

isc Silicon NPN Power Transistor BU931PDESCRIPTIONHigh VoltageDARLINGTONMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 4
0.7. Size:223K inchange semiconductor
bu931zpfi.pdf 

isc Silicon NPN Darlington Power Transistor BU931ZPFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T
0.8. Size:212K inchange semiconductor
bu931z.pdf 

isc Silicon NPN Darlington Power Transistor BU931ZDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T =2
0.9. Size:218K inchange semiconductor
bu931zp.pdf 

isc Silicon NPN Darlington Power Transistor BU931ZPDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T =
0.10. Size:208K inchange semiconductor
bu931r.pdf 

isc Silicon NPN Power Transistor BU931RDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEOV E
0.11. Size:218K inchange semiconductor
bu931rp.pdf 

isc Silicon NPN Power Transistor BU931RPDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEOV
Другие транзисторы... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, MJE340
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
History: 2SC4003
| MPS2484
| ZTX614
| BF321
| 2SC889
| BD120
| ECH8503-TL-H