BUV21 - Даташиты. Аналоги. Основные параметры

BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. http //onsemi.com Features 40 AMPERES High DC Current Gain NPN SILICON POWER hFE min = 20 at IC = 12 A METAL TRANSISTOR Low VCE(sat), VCE(sat) 200 VOLTS - 250 WATTS max = 0.6 V at IC = 8 A Very Fast Switching Times NPN TF max = 0.4

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV21 DESCRIPTION With TO-3 package High DC current gain@IC=12A Fast switching times Low collector saturation voltage APPLICATIONS Designed for high current,high speed and high power applications. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) an

Order this document MOTOROLA by BUV21/D SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series 40 AMPERES NPN Silicon Power Transistor NPN SILICON POWER . . . designed for high speed, high current, high power applications. METAL TRANSISTOR High DC current gain 200 VOLTS hFE min. = 20 at IC = 12 A 250 WATTS Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A Very fast switching

BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. http //onsemi.com Features 40 AMPERES High DC Current Gain NPN SILICON POWER hFE min = 20 at IC = 12 A METAL TRANSISTOR Low VCE(sat), VCE(sat) 200 VOLTS - 250 WATTS max = 0.6 V at IC = 8 A Very Fast Switching Times TF max = 0.4 ms at