FMMT4355 - Даташиты. Аналоги. Основные параметры

FMMT449 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from Process NB. Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter FMMT449 Units 30 V VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 5 V VEBO

FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data Avalanche Transistor Case SOT23 50A Peak Avalanche Current (Pulse width = 20ns) Case Material Molded Plastic. Green Molding Compound. BVCES > 150V UL Flammability Classification Rating 94V-0 BVCEO > 50V Moisture Sensitivity Level 1 per J-STD-020 Specifically designed for Av

FMMT491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 40V Case SOT23 Case Material Molded Plastic, Green Molding Compound IC = 1A Continuous Collector Current UL Flammability Classification Rating 94V-0 ICM = 2A Peak Pulse Current Moisture Sensitivity Level 1 per J-STD-020 RCE(sat) = 195m for a

FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case SOT23 stringent requirements of automotive applications. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Feature Term

FMMT495 150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 150V Case SOT23 IC = 1A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity Level 1 per J-STD-020

A Product Line of Diodes Incorporated FMMT459 500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Feature Mechanical Data BVCEV > 500V Case SOT23 BVECV > 6V reverse blocking Case Material Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 IC = 150mA high Continuous Collector Current Moisture Sensitivity Level 1 per J-STD-020

FMMT494 120V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 120V Case SOT23 (Type DN) IC = 1A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity Level 1 per J-STD

SOT SI I O A A T 6 S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

A Product Line of Diodes Incorporated FMMT489 30V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 30V Case SOT-23 IC = 1A high Continuous Collector Current Case material Molded Plastic. Green Molding Compound. ICM Up to 4A Peak Pulse Current UL Flammability Rating 94V-0 Excellent hFE Characteristics Up To 4A Moisture Sens

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

FMMT497 SOT23 NPN silicon planar high voltage high performance transistor Complementary part number - FMMT597 C Device marking - 497 B E E C B Pinout - top view Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 5V Continuous collector current IC 500 mA Peak pulse current ICM 1A

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I D A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

A Product Line of Diodes Incorporated FMMT459Q 500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data Case SOT23 This Bipolar Junction Transistor (BJT) has been designed to meet the Case Material Molded Plastic, Green Molding Compound stringent requirements of Automotive Applications. UL Flammability Classification Rating 94V-0 Moisture Sensiti

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

SOT23 NPN SILICON PLANAR 400 FMMT4400 GENERAL PURPOSE TRANSISTORS 401 FMMT4401 ISSUE 4 FEBRUARY 1997 E T I D T I T C T V B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated) T T T I I IT DITI II i V V I I V I II V V I I V I

A Product Line of Diodes Incorporated FMMT451 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 60V Case SOT23 IC = 1A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity L

SOT23 NPN SILICON PLANAR 49 FMMT449 MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 T i I i RCE(sat) 250m at 1A E C T T T T I D T I B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T I IT DITI II V V I I V I II i V

SOT SI I O A A T HI H O A T A SISTO ISS A Y 6 T V I V i T I D T I SOT A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I i i V I V i V V I V I II I V V i I V V II i V V I I i V I i I V V T i T I

A Product Line of Diodes Incorporated FMMT493 100V NPN MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 100V Case SOT23 IC = 1A High Continuous Collector Current Case material Molded Plastic. Green Molding Compound. ICM = 2A Peak Pulse Current UL Flammability Rating 94V-0 500mW Power Dissipation Moisture Sensitivity Level 1 p

FMMT458 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 400V Case SOT23 IC = 225mA High Continuous Collector Current Case Material Molded Plastic. Green Molding Compound. UL ICM = 1A Peak Pulse Current Flammability Rating 94V-0 500mW Power Dissipation Moisture Sensitivity Level 1 per J-STD-020 Excellent hFE Charac

FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data Avalanche Transistor Case SOT23 60A Peak Avalanche Current (Pulse width = 20ns) Case Material Molded Plastic. Green Molding Compound. BVCES > 260V (415) & 320V (417) UL Flammability Classification Rating 94V-0 BVCEO > 100V Moisture Sensitivity Level 1 per J-STD-020

FMMT493A HIGH GAIN NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 60V Case SOT23 IC = 1A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. VCE(SAT)= 0.5V @1A UL Flammability Classification Rating 94V-0 500mW Power Dissipation Moisture Sensitivity Level 1 per J-STD-020 Low Saturation Vol

A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data BVCEO > 60V Case SOT23 IC = 1A Continuous Collector Current Case Material Molded plastic, Green Molding Compound ICM = 2A Peak Pulse Current UL Flammability Classification Rating 94V-0 RCE(sat) = 195m for a Low Equivalent On-Resistance

SOT23 PNP SILICON PLANAR 402 FMMT4402 GENERAL PURPOSE TRANSISTOR 403 FMMT4403 ISSUE 2 - MARCH 1995 E T I D T I T C T V B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated) T T T I I IT DITI II i V V I I V I II V V I I V I i V

FMMT42CSM MECHANICAL DATA GENERAL PURPOSE Dimensions in mm (inches) NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) PACKAGE 3 FEATURES 21 GENERAL PURPOSE NPN TRANSISTOR 1.91 0.10 (0.075 0.004) A HERMETIC CERAMIC SURFACE MOUNT 0.31 rad. (0.012) 3.05 0.13 PACKAGE (0.12 0.005) 1.40 (0.055)

FMMT42DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 300V CEO 6.22 0.13 A = 1.27 0.13 I = 0.5A C (0.

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT495 TRANSISTOR (NPN) SOT-23 FEATURE Low VCE(sat) hFE characterised up to 1A for high current gain hold up 1. BASE For general amplification 2. EMITTER 3. COLLECTOR MARKING 495 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors FMMT449 TRANSISTOR (NPN) SOT 23 FEATURES Low Equivalent On-Resistance MARKING 449 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 50 V CBO 3. COLLECTOR V Collector-Emitter Voltage 30 V CEO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors FMMT493 TRANSISTOR (NPN) SOT 23 FEATURES Complementary Type FMMT593 MARKING 493 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 120 V CBO 3. COLLECTOR V Collector-Emitter Voltage 100 V CEO

www.jscj-elec.com AD-FMMT491 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-FMMT491 Plastic-Encapsulated Transistor AD-FMMT491 Transistor (NPN) FEATURES Low equivalent on-resistance AEC-Q101 qualified MARKING 491 MAXIMUM RATINGS (T = 25 C unless otherwise specified) j Parameter Symbol Value Unit Collector-base voltage V 80 V CBO Collector-emitter vo

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR (NPN) FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking 491 MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Ba

FMMT4124 TRANSISTOR (NPN) SOT 23 FEATURES Switching Application MARKING ZC 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 200 mA PC Collector Power Dissipation 330 mW R T

FMMT449 TRANSISTOR (NPN) SOT 23 FEATURES Low Equivalent On-Resistance MARKING 449 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 50 V CBO 3. COLLECTOR V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 1 A C PC Collector Power Dissipation 200

FMMT493 TRANSISTOR (NPN) SOT 23 FEATURES Complementary Type FMMT593 MARKING 493 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 120 V CBO 3. COLLECTOR V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 1000 mA C PC Collector Power Dissipation 2

FMMT491 TRANSISTOR (NPN) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER 3. COLLECTOR Marking 491 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 250 mW

FMMT491 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking 491 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous

FMMT491 COLLECTOR 3 General Purpose Transistor NPN Silicon 3 P b Lead(Pb)-Free 1 1 BASE 2 SOT-23 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO 60 V Collector-Emitter Breakdown Voltage V(BR)CBO 80 V Emitter-Base Breakdown Voltage V(BR)EBO V 5.0 Collector Current IC A 1.0 Peak Pulse Current ICm A 2.0 Power Dissipat

SEMICONDUCTOR FMMT491 TECHNICAL DATA FMMT491 TRANSISTOR (NPN) FEATURES Low equivalent on-resistance 3 Marking 491 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBO SOT 23 V Collector-Emitter Voltage 60 V CEO VEBO Emitter-Base Voltage 5 V COLLECTOR IC Collector Current 1 A 3 ICM Peak Pulse Current

SMD Type Transistors NPN Transistors FMMT459 (KMMT459) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features 6V reverse blocking capability Low saturation voltage - 90mV @ 50mA 1 2 IC=150mA continuous +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type Transistors NPN Transistors FMMT493 (KMMT493) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=1A 1 2 Collector Emitter Voltage VCEO=100V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Complementary to FMMT593 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

SMD Type Transistors NPN Transistors FMMT491 (KMMT491) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VCE(sat) maximum specification improvement Reverse blocking specification improvement 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 C 1.Base 2.Emitter B 3.collector E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

FMMT489 SMD Type IC SMD Type Transistors Medium Power Transistor SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Very low equivalent on-resistance 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 30 V Emitter-base v

FMMT493 Features SOT-23 For switching and AF amplifier applications. As complementary type of the PNP transistor FMMT593 is recommended. 1.Base 2.Emitter 3.Collector Marking 493 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 120 V CBO Collector Emitter Voltage V 100 V CEO E

FMMT458 SMD Type Transistors High Voltage Transistor SOT-23 Unit mm +0.1 2.9-0.1 Features +0.1 0.4-0.1 3 400 Volt VCEO 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 5V Peak collector

FMMT491 NPN Silicon Epitaxial Planar Transistor Features SOT-23 Low equivalent on-resistance Be complementaty with FMMT591 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 80 V CBO Collector Emitter Voltage V 60 V CEO Emitter Base Voltage V 5 V

FMMT413 SOT23 NPN silicon planar avalanche transistor Summary V(BR)CES = 150V, V(BR)CEO = 50V, IUSB = 25A Description The FMMT413 is a NPN silicon planar bipolar transistor optimized for avalanche mode operation. Tight process control and low inductance packaging combine to produce high current pulses with fast edges, ideal for laser diode driving. Features C Avalanche mode opera

FMMT493 NPN Transistor Features For switching and AF amplifier applications. SOT-23 (TO-236) As complementary type of the PNP transistor FMMT593 is recommended. 1.Base 2.Emitter 3.Collector Marking 493 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 120 V CBO Collector Em

FMMT491 NPN Transistor Features Low equivalent on-resistance SOT-23 (TO-236) Be complementaty with FMMT591 1.Base 2.Emitter 3.Collector Marking 491 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 80 V CBO Collector Emitter Voltage V 60 V CEO Emitter Base Voltage V 5 V

FMMT489 NPN Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Po