KTN2222S - описание и поиск аналогов

SEMICONDUCTOR KTN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Low Leakage Current _ + 2.93 0.20 A B 1.30+0.20/-0.15 ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX 2 Low Saturation Voltage 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. 1 G

SEMICONDUCTOR KTN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 Low Leakage Current B 1.30+0.20/-0.15 ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low Saturation Voltage E 2.40+0.30/-0.20 1 G 1.90 VCE(sat)=0.3V(Max.) ; IC=150mA,

SEMICONDUCTOR KTN2222/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. N DIM MILLIMETERS Low Saturation Voltage A 4.70 MAX E K B 4.80 MAX VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. G C 3.70 MAX D Complementary to the KTN2907/2907A. D 0.45 E 1.00 K

SEMICONDUCTOR KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current D DIM MILLIMETERS ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. 2 _ + A 1.60 0.10 Low Saturation Voltage _ + B 0.85 0.10 3 1 _ C 0.70 0.10 + VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. D 0.27+0.10/-0.05 _ Complementary

SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Leakage Current _ A + 2.00 0.20 D 2 ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. _ + B 1.25 0.15 _ + C 0.90 0.10 Low Saturation Voltage 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 VCE(sat)=0.3V(Max.) ; IC=150