KTN2369 - Даташиты. Аналоги. Основные параметры

SEMICONDUCTOR KTN2369/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. B C FEATURES High Frequency Characteristics fT=500MHz (Min.) (VCE=10V, f=100MHz, IC=10mA). Excellent Switching Characteristics. N DIM MILLIMETERS KTN2369/2369A Electrically Similar to 2N2369/2369A. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RA

SEMICONDUCTOR KTN2369U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS High Frequency Characteristics. _ A + 2.00 0.20 D 2 _ + B 1.25 0.15 fT=500MHz (Min.) (VCE=10V, f=100MHz, IC=10mA). _ + C 0.90 0.10 3 1 Excellent Switching Characteristics. D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 H 0.15+0.1/

SEMICONDUCTOR KTN2369S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + 2.93 0.20 Excellent High Frequency Characteristics. A B 1.30+0.20/-0.15 Excellent Switching Characteristics. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 L 0.55 P P M 0.2