Справочник транзисторов. MBT6429DW1

 

Биполярный транзистор MBT6429DW1 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MBT6429DW1
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 500
   Корпус транзистора: SC-88 SC-70 SOT-363

 Аналоги (замена) для MBT6429DW1

 

 

MBT6429DW1 Datasheet (PDF)

 0.1. Size:219K  onsemi
mbt6429dw1t1g.pdf

MBT6429DW1
MBT6429DW1

MBT6429DW1T1GAmplifier TransistorsNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 45 Vdc(4) (5) (6)Collector-Base Voltage VCBO 55 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 200 mAdcTHERMAL CHARACTE

 7.1. Size:300K  motorola
mmbt6428 mmbt6429.pdf

MBT6429DW1
MBT6429DW1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6428LT1/DAmplifier TransistorsMMBT6428LT1COLLECTORNPN SiliconMMBT6429LT131BASE23EMITTERMAXIMUM RATINGS1

 7.2. Size:47K  philips
pmbt6428 pmbt6429 3.pdf

MBT6429DW1
MBT6429DW1

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT6428; PMBT6429NPN general purpose transistors1999 Apr 27Product specificationSupersedes data of 1997 Apr 02Philips Semiconductors Product specificationNPN general purpose transistors PMBT6428; PMBT6429FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 base2 emitterA

 7.3. Size:109K  philips
pmbt6428 pmbt6429.pdf

MBT6429DW1
MBT6429DW1

DISCRETE SEMICONDUCTORS DATA SHEETPMBT6428; PMBT6429NPN general purpose transistorsProduct data sheet 2004 Jan 22Supersedes data of 1999 Apr 27NXP Semiconductors Product data sheetNPN general purpose transistors PMBT6428; PMBT6429FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 base2 emitterAPPLICATIONS3 collector Gen

 7.4. Size:302K  nxp
pmbt6428 pmbt6429.pdf

MBT6429DW1
MBT6429DW1

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 7.5. Size:125K  onsemi
mmbt6429lt1g.pdf

MBT6429DW1
MBT6429DW1

MMBT6428LT1G,MMBT6429LT1G,NSVMMBT6429LT1GAmplifier TransistorsNPN Siliconhttp://onsemi.comFeaturesCOLLECTOR3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2EMITTER3SOT-23 (TO-236)MAXIM

 7.6. Size:194K  onsemi
mmbt6428lt1 mmbt6429lt1.pdf

MBT6429DW1
MBT6429DW1

MMBT6428LT1G,MMBT6429LT1GAmplifier TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS 2EMITTERRating Symbol 6428LT1 6429LT1 UnitCollector-Emitter Voltage VCEO 50 45 VdcCollector-Base Voltage VCBO 60 55 Vdc3SOT-23 (TO-236)Emitter-Base Voltage VEBO 6.0 VdcCA

 7.7. Size:82K  onsemi
mmbt6428lt1g mmbt6429lt1g nsvmmbt6429lt1g.pdf

MBT6429DW1
MBT6429DW1

MMBT6428LT1G,MMBT6429LT1G,NSVMMBT6429LT1GAmplifier TransistorsNPN Siliconwww.onsemi.comFeaturesCOLLECTOR3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2EMITTER3SOT-23 (TO-236)MAXIMUM

 7.8. Size:125K  onsemi
nsvmmbt6429lt1g.pdf

MBT6429DW1
MBT6429DW1

MMBT6428LT1G,MMBT6429LT1G,NSVMMBT6429LT1GAmplifier TransistorsNPN Siliconhttp://onsemi.comFeaturesCOLLECTOR3 NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2EMITTER3SOT-23 (TO-236)MAXIM

 7.9. Size:280K  lrc
lmbt6429lt1g.pdf

MBT6429DW1
MBT6429DW1

LESHAN RADIO COMPANY, LTD.Amplifier TransistorsNPN Silicon We declare that the material of productLMBT6428LT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBT6429LT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBT6428LT1GQualified and PPAP Capable.ORDERING INFORMATIONS-LMBT6429LT1GDevice Marking Shipping(S

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