2SCR523M - Даташиты. Аналоги. Основные параметры

2SCR523M / 2SCR523EB / 2SCR523UB Datasheet NPN 100mA 50V General Purpose Transistor lOutline l Parameter Value SOT-723 SOT-416FL VCEO 50V IC 100mA 2SCR523M 2SCR523EB (VMT3) (EMT3F) SOT-323FL 2SCR523UB (UMT3F) lFeatures lInner circui

General purpose transistor(50V,0.1A) 2SCR523M / 2SCR523EB / 2SCR523UB Structure Dimensions (Unit mm) NPN silicon epitaxial planar transistor VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Abbreviated symbol NB Applications Switch, LED driver EMT3F (3) Packaging specifications Package VMT3 EMT3F UMT3F (1) (2) Packaging Type Taping Tapi

General purpose transistor(20V,0.2A) 2SCR522M / 2SCR522EB / 2SCR522UB Structure Dimensions (Unit mm) NPN silicon epitaxial planar transistor VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Abbreviated symbol NC Applications Switch, LED driver EMT3F (3) Packaging specifications Package VMT3 EMT3F UMT3F (1) (2) Packaging Type Taping Tapin

2SCR554P FRA Datasheet Middle Power Transistor (80V / 1.5A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO 80V IC 1.5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=300mV(Max.) (IC/IB=500mA/25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITC

2SCR554P5 Datasheet Middle Power Transistors (80V / 1.5A) lOutline l SOT-89 Parameter Value SC-62 VCEO 80V IC 1.5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=300mV(Max.) (IC/IB=500mA/25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging speci

Midium Power Transistors (30V / 5A) 2SCR542D Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor CPT3 (SC-63) Features 1) Low saturation voltage VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) 2) High speed switching 9 (1) Base Applications (2) Collector (3) Emitter Driv

2SCR552P 2SCR552PFRA Datasheet NPN 3.0A 30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 30V Base Collector IC 3.0A Emitter 2SCR552PFRA 2SCR552P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR552P 2SAR552PFRA 3) Low VCE(sat) VCE(sat)=0.40V(Max.) (IC/IB=1A/50mA) 4) Lead Free/RoHS Co

2SCR574D A07 Datasheet NPN 2.0A 80V Middle Power Transistor lOutline l Parameter Value CPT VCEO 80V IC 2A 2SCR574D A07 lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR574D. 3) Low VCE(sat) VCE(sat)=0.30V(Max.). (IC/IB=1A/50mA) 4) Lead

Midium Power Transistors (80V / 2.5A) 2SCR544P Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol NS Driver Packaging specifications Inner circuit (Unit mm) Package Taping

2SCR513P5 Datasheet Medium Power Transistors (50V / 1V) lOutline l SOT-89 Parameter Value SC-62 VCEO 50V IC 1A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=-0.35V(Max.) (IC/IB=500mA/25mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifi

Midium Power Transistors (80V / 1.5A) 2SCR554R Features Dimensions (Unit mm) 1) Low saturation voltage, typically TSMT3 VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA) 2) High speed switching (3) (1) (2) Structure (1) Base (2) Emitter NPN Silicon epitaxial planar transistor (3) Collector Abbreviated symbol NH Applications Inner circuit Driver (3) Pa

2SCR574D Datasheet NPN 2.0A 80V Middle Power Transistor lOutline l Parameter Value CPT VCEO 80V IC 2A 2SCR574D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR574D. 3) Low VCE(sat) VCE(sat)=0.30V(Max.). (IC/IB=1A/50mA) 4) Lead Free/Ro

2SCR562F3 Datasheet NPN 6.0A 30V Middle Power Transistor lOutline l DFN2020-3S Parameter Value VCEO 30V IC 6A HUML2020L3 lFeatures lInner circuit l l 1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(sat)=220mV(Max.). (IC/IB=3A/150mA) 3) High collector current. IC=6A(max),ICP=7A(max) 4) Leadless small SMD package (HUML2020L3) Excellent thermal and electrical conduct

2SCR513P Datasheet NPN 1.0A 50V Middle Power Transistor lOutline MPT3 Parameter Value VCEO 50V Base IC 1.0A Collector Emitter 2SCR513P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR513P 3) Low VCE(sat) VCE(sat)=0.35V(Max.) (IC/IB=500mA/25mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Moto

2SCR512R Datasheet NPN 2.0A 30V Middle Power Transistor lOutline l Parameter Value TSMT3 VCEO 30V IC 2A SOT-346T SC-96 lFeatures l 1)Suitable for Middle Power Driver lInner circuit l 2)Complementary PNP Types 2SAR512R 3)Low VCE(sat) VCE(sat)=400mV(Max.) (IC/IB=700mA/35mA) lApplication l LOW FREQ

Midium Power Transistors (50V / 4A) 2SCR543D Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor CPT3 (SC-63) Features 1) Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 2A / 100mA) 2) High speed switching 9 (1) Base Applications (2) Collector (3) Emitter Dri

2SCR533P Datasheet Middle Power Transistors (50V / 3A) lOutline l SOT-89 Parameter Value SC-62 VCEO 50V IC 3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=350mV(Max.) (IC/IB=1A/50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

2SCR513R Datasheet NPN 1.0A 50V Middle Power Transistor lOutline l Parameter Value TSMT3 VCEO 50V IC 1A SOT-346T SC-96 lFeatures l 1)Suitable for Middle Power Driver lInner circuit l 2)Complementary PNP Types 2SAR513R 3)Low VCE(sat) VCE(sat)=350mV (Max.) (IC/IB=500mA/25mA) lApplication l LOW FRE

2SCR553R Datasheet NPN 2.0A 50V Middle Power Transistor lOutline TSMT3 Parameter Value Collector VCEO 50V Base IC 2.0A Emitter 2SCR553R lFeatures (SC-96) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR553R 3) Low VCE(sat) VCE(sat)=0.35V(Max.) (IC/IB=700mA/35mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Motor driver

2SCR512P5 Datasheet Midium Power Transistors (30V / 2V) lOutline l SOT-89 Parameter Value SC-62 VCEO 30V IC 2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=0.4V(Max.) (IC/IB=700mA/35mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifica

2SCR502EB / 2SCR502UB Datasheet NPN 500mA 30V General Purpose Transistors lOutline EMT3F UMT3F Parameter Value Collector Collector VCEO 30V Base Base IC 500mA Emitter Emitter 2SCR502UB 2SCR502EB (SC-85) (SC-89) lFeatures 1)General Purpose. 2) Complementary PNP Types 2SAR502EB (EMT3F) / 2SAR502UB (UMT3F) 3) Large collector current Ic=max.500mA 4) Low VcE

2SCR572D3 FRA Datasheet NPN 5.0A 30V Power Transistor AEC-Q101 Qualified lOutline l Parameter Value DPAK VCEO 30V IC 5A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary PNP Types 2SAR572D3 FRA. 3) Low VCE(sat) VCE(sat)=400mV(Max.). (IC/IB=2A/100mA) lApplication l LOW FREQUENCY AMPLI

Midium Power Transistors (50V / 3A) 2SCR533D Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor CPT3 (SC-63) Features 1) Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA) 2) High speed switching 9 (1) Base Applications (2) Collector (3) Emitter Driv

2SCR586D3 NPN 5.0A 80V Power Transistor Datasheet lOutline l Parameter Value DPAK VCEO 80V IC 5A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary PNP Types 2SAR586D3. 3) Low VCE(sat) VCE(sat)=300mV(Max.). (IC/IB=2A/100mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging specificati

2SCR553P Datasheet Middle Power Transistors (50V / 2A) lOutline l SOT-89 Parameter Value SC-62 VCEO 50V IC 2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=350mV(Max.) (IC/IB=700mA/35mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifica

2SCR514P 2SCR514PFRA Datasheet NPN 0.7A 80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 80V Base IC Collector 0.7A Emitter 2SCR514PFRA 2SCR514P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR514P 2SAR514PFRA 3) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=300mA/15mA) 4) Lead Free/RoHS

2SCR502EB / 2SCR502UB Datasheet NPN 500mA 30V General Purpose Transistors lOutline EMT3F UMT3F Parameter Value Collector Collector VCEO 30V Base Base IC 500mA Emitter Emitter 2SCR502UB 2SCR502EB (SC-85) (SC-89) lFeatures 1)General Purpose. 2) Complementary PNP Types 2SAR502EB (EMT3F) / 2SAR502UB (UMT3F) 3) Large collector current Ic=max.500mA 4) Low VcE

2SCR544R Datasheet NPN 2.5A 80V Middle Power Transistor lOutline l Parameter Value TSMT3 VCEO 80V IC 2.5A SOT-346T SC-96 lFeatures l 1)Suitable for Middle Power Driver lInner circuit l 2)Complementary PNP Types 2SAR544R 3)Low VCE(sat) VCE(sat)=300mV(Max.) (IC/IB=1A/50mA) lApplication l LOW FREQU

2SCR573D Datasheet NPN 3.0A 50V Middle Power Transistor lOutline l Parameter Value CPT VCEO 50V IC 3A 2SCR573D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR573D. 3) Low VCE(sat) VCE(sat)=0.35V(Max.). (IC/IB=1A/50mA) 4) Lead Free/Ro

2SCR544P5 Datasheet Midium Power Transistors (80V / 2.5A) lOutline l SOT-89 Parameter Value SC-62 VCEO 80V IC 2.5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=300mV(Max.) (IC/ IB=1A/50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifi

2SCR533P5 Datasheet Middle Power Transistors (50V / 3A) lOutline l SOT-89 Parameter Value SC-62 VCEO 50V IC 3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=350mV(Max.) (IC/IB=1A/50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specificati

2SCR513P 2SCR513PFRA Datasheet NPN 1.0A 50V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 50V Base IC 1.0A Collector Emitter 2SCR513PFRA 2SCR513P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR513P 2SAR513PFRA 3) Low VCE(sat) VCE(sat)=0.35V(Max.) (IC/IB=500mA/25mA) 4) Lead Free/RoHS

2SCR502U3 HZG Datasheet NPN 500mA 30V General purpose transistors AEC-Q101 Qualified lOutline l SOT-323 Parameter Value SC-70 VCEO 30V IC 0.5A UMT3 lFeatures lInner circuit l l 1)General purpose. 2)Complementary PNP types 2SAR502U3 HZG (UMT3) 3)Collector current is large. 4)Low VCE(sat). lApplication l LOW FREQUENCY AMPLIF

2SCR553P FRA Datasheet Middle Power Transistor (50V / 2A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO 50V IC 2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=350mV(Max.) (IC/IB=700mA/35mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHIN

2SCR574D3 FRA Datasheet NPN 2.0A 80V Power Transistor AEC-Q101 Qualified lOutline l Parameter Value DPAK VCEO 80V IC 2A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary PNP Types 2SAR574D3 FRA. 3) Low VCE(sat) VCE(sat)=300mV(Max.). (IC/IB=1A/50mA) lApplication l LOW FREQUENCY AMPLIF

2SCR514R Datasheet NPN 0.7A 80V Middle Power Transistor lOutline l Parameter Value TSMT3 VCEO 80V IC 0.7A SOT-346T SC-96 lFeatures l 1)Suitable for Middle Power Driver lInner circuit l 2)Complementary PNP Types 2SAR514R 1)Low saturation voltage, typically VCE(sat)=300mV(Max.) (IC/ IB=300mA/15mA) l

2SCR573D3 Datasheet NPN 3.0A 50V Power Transistor lOutline l Parameter Value DPAK VCEO 50V IC 3A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary PNP Types 2SAR573D3. 3) Low VCE(sat) VCE(sat)=350mV(Max.). (IC/IB=1A/50mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging specificatio

2SCR542PFRA 2SCR542P Data Sheet NPN 5.0A 30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 30V Base IC Collector 5.0A Emitter 2SCR542PFRA 2SCR542P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2SAR542PFRA 2) Complementary PNP Types 2SAR542P 3) Low VCE(sat) VCE(sat)=0.4V Max. (IC/IB=2A/100mA) 4) Lead Free/RoHS Compliant

2SCR572D Datasheet NPN 5.0A 30V Middle Power Transistor lOutline l Parameter Value CPT VCEO 30V IC 5A 2SCR572D lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR572D. 3) Low VCE(sat) VCE(sat)=0.40V(Max.). (IC/IB=2A/100mA) 4) Lead Free/R

2SCR542F3 Datasheet NPN 3.0A 30V Middle Power Transistor lOutline l Parameter Value HUML2020L3 VCEO 30V IC 3A 2SCR542F3 lFeatures l lInner circuit l 1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(sat)=0.20V(Max.). (IC/IB=1A/50mA) 3) High collector current. IC=3A(max),ICP=6A(m

Midium Power Transistors (30V / 2A) 2SCR512P Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol NB Driver Packaging specifications Inner circuit (Unit mm) Package Taping

Midium Power Transistors (80V / 2.5A) 2SCR544D Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor CPT3 6.5 5.1 2.3 0.5 Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 1A / 50mA) 0.75 2) High speed switching 0.65 0.9 2.3 2.3 (1) (2) (3) 0.5 1.0 Applications Driver Packaging specifications Inner

2SCR502EB / 2SCR502UB Datasheet NPN 500mA 30V General purpose transistors lOutline l Parameter Value EMT3F UMT3F VCEO 30V IC 0.5A 2SCR502EB 2SCR502UB SOT-416FL SOT-323FL lFeatures l 1)General purpose. lInner circuit l 2)Complementary PNP types 2SAR502EB(EMT3F)/2SAR

2SCR512P 2SCR512PFRA Datasheet NPN 2.0A 30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 30V Base IC 2.0A Collector Emitter 2SCR512PFRA 2SCR512P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR512P 2SAR512PFRA 3) Low VCE(sat) VCE(sat)=0.40V(Max.) (IC/IB=700mA/35mA) 4) Lead Free/RoHS

2SCR542P Datasheet Middle Power Transistor (30V / 5A) lOutline l SOT-89 Parameter Value SC-62 VCEO 30V IC 5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=400mV(Max.) (IC/IB=2A/100mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specification

2SCR572D3 NPN 5.0A 30V Power Transistor Datasheet lOutline l Parameter Value DPAK VCEO 30V IC 5A TO-252 lFeatures lInner circuit l l 1) Suitable for Power Driver. 2) Complementary PNP Types 2SAR572D3. 3) Low VCE(sat) VCE(sat)=400mV(Max.). (IC/IB=2A/100mA) lApplication l LOW FREQUENCY AMPLIFIER lPackaging specificati

2SCR544P 2SCR544PFRA Data Sheet NPN 2.5A 80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 80V Base Collector IC 2.5A Emitter 2SCR544PFRA 2SCR544P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SAR544P 2SAR544PFRA 3) Low VCE(sat) VCE(sat)=0.4V Max. (IC/IB=1A/50mA) 4) Lead Free/RoHS Compliant

2SCR543R Datasheet NPN 3.0A 50V Middle Power Transistor lOutline l SOT-346T Parameter Value SC-96 VCEO 50V IC 3A TSMT3 lFeatures lInner circuit l l 1)Suitable for Middle Power Transistor 2) Complementary PNP Types 2SAR543R 3) Low saturation voltage, typically VCE(sat)=350mV(Max.) (IC/IB=2A/100mA) lApplication l LOW FREQUEN

2SCR533P FRA Datasheet Middle Power Transistor (50V / 3A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO 50V IC 3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, typically VCE(sat)=350mV(Max.) (IC/IB=1A/50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING

Midium Power Transistors (30V / 3A) 2SCR552P Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 1A / 50mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol NF Driver Packaging specifications Inner circuit (Unit mm) Package Taping (

2SCR573D A08 Datasheet NPN 3.0A 50V Middle Power Transistor lOutline l Parameter Value CPT VCEO 50V IC 3A 2SCR573D A08 lFeatures l 1) Suitable for Middle Power Driver. lInner circuit l 2) Complementary PNP Types 2SAR573D. 3) Low VCE(sat) VCE(sat)=0.35V(Max.). (IC/IB=1A/50mA) 4) Lead

Midium Power Transistors (80V / 1.5A) 2SCR554P Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 25mA) (1) (2) (3) 2) High speed switching Applications Abbreviated symbol NH Driver Packaging specifications Inner circuit (Unit mm) (2) Package

isc Silicon NPN Power Transistors 2SCR542D DESCRIPTION DC Current Gain h 200-500@ I = 0.5A FE C Collector-Emitter Breakdown Voltage V = 30V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

isc Silicon NPN Power Transistor 2SCR586D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V 0.3V@(I =2A,I =100mA) CE(sat) C B Complementary NPN types 2SAR586D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SCR574D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V =0.3V(max)@(I =1A,I =50mA) CE(sat) C B Complementary NPN types 2SAR574D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

isc Silicon NPN Power Transistor 2SCR573D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V =0.35V@(I =1A,I =50mA) CE(sat) C B Complementary NPN types 2SAR573D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

isc Silicon NPN Power Transistor 2SCR572D DESCRIPTION Suitable for middle power drivers Low V CE(sat) V =0.4V@(I =2A,I =0.1A) CE(sat) C B Complementary NPN types 2SAR572D 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL