Биполярный транзистор LB123T - описание производителя. Основные параметры. Даташиты.
Наименование производителя: LB123T
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO126
LB123T Datasheet (PDF)
lb123t.pdf
LB123T(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features High voltage, high speed power switch Switch regulators 2.500 7.400PWM inverter and Motor controls 2.9001.1007.8001.500 Solenoid and relay drivers 3.900Deflection circuits 3.0004.100MAXIMUM RATINGS* TA=25 unless otherwise noted 10.600 3.2000.00011.
lb123t.pdf
LB123TNPN Epitaxial Planar Transistors1. EMITTER2. COLLECTORP b Lead(Pb)-Free3. BASE123TO-126*High voltage, high speed power switch *Switch regulators *PWM inverter and Motor controls *Solenoid and relay drivers *Deflection circuits aRating Symbol Value UnitVCBO600 VCollector-Base VoltageVCEO400 VCollector-Emitter VoltageVVEBO 8Emitter-Base Volt
hlb123t.pdf
Spec. No. : HT200402HI-SINCERITYIssued Date : 1993.05.15Revised Date : 2006.02.20MICROELECTRONICS CORP.Page No. : 1/4HLB123TNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123T is designed for high voltage. High speed switching inductive circuitsand amplifier applications.FeaturesTO-126 High Speed Switching Low Saturation Voltage High ReliabilityAbsolut
hlb123d.pdf
Spec. No. : HE6603HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.08.16MICROELECTRONICS CORP.Page No. : 1/5HLB123DNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123D is designed for high voltage. High speed switching inductive circuitsand amplifier applications.FeaturesTO-126ML High Speed Switching Low Saturation Voltage High ReliabilityAbsolut
hlb123i.pdf
Spec. No. : HI200202HI-SINCERITYIssued Date : 2002.06.01Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/5HLB123INPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HLB123I is designed for high voltage. High speed switching inductive circuitsand amplifier applications.TO-251Features High Speed Switching Low Saturation Voltage High ReliabilityAbsolut
hlb123sa.pdf
Spec. No. : HA200601 HI-SINCERITY Issued Date : 2006.12.01 Revised Date : 2009.07,02 MICROELECTRONICS CORP. Page No. : 1/6 HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-92 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings Pa
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050
