Справочник транзисторов. ST2SC2073U

 

Биполярный транзистор ST2SC2073U - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: ST2SC2073U
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 150 MHz
   Ёмкость коллекторного перехода (Cc): 10 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT89

 Аналоги (замена) для ST2SC2073U

 

 

ST2SC2073U Datasheet (PDF)

 ..1. Size:632K  semtech
st2sc2073u.pdf

ST2SC2073U
ST2SC2073U

ST 2SC2073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 7 V Collector Current IC 1 APeak Collector Current (Single pulse, tp = 300 s) ICP 2 A0.5 Ptot W To

 9.1. Size:647K  semtech
st2sc4073u.pdf

ST2SC2073U
ST2SC2073U

ST 2SC4073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A0.5 Ptot W T

 9.2. Size:671K  semtech
st2sc4379u.pdf

ST2SC2073U
ST2SC2073U

ST 2SC4379U NPN Silicon Epitaxial Planar Transistor for power amplification applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 VCollector Current IC 2 ABase Current IB 0.4 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150

 9.3. Size:634K  semtech
st2sc4378u.pdf

ST2SC2073U
ST2SC2073U

ST 2SC4378U NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 80 VCollector Emitter Voltage VCEO 60 VEmitter Base Voltage VEBO 5 VCollector Current IC 1 APeak Collector Current ICP 2 A0.5 Ptot W Total Power Dissipation1 1) Junction Temperature Tj 150 Storage Temperature Range Tstg

 9.4. Size:539K  semtech
st2sc4672u.pdf

ST2SC2073U
ST2SC2073U

ST 2SC4672U NPN Silicon Epitaxial Planar Transistor Low Frequency Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 6 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 6 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ

 9.5. Size:638K  semtech
st2sc4541u.pdf

ST2SC2073U
ST2SC2073U

ST 2SC4541U NPN Silicon Epitaxial Planar Transistor for power switching and power amplifier applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 3 A Current IB 0.6 ABase0.5 Ptot W Total Power Dissipation1 1) Junction Te

 9.6. Size:514K  semtech
st2sc1383 st2sc1384.pdf

ST2SC2073U
ST2SC2073U

ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCo

 9.7. Size:563K  semtech
st2sc4375u.pdf

ST2SC2073U
ST2SC2073U

ST 2SC4375U NPN Silicon Epitaxial Planar Transistor High current application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 30 VCollector Emitter Voltage VCEO 30 VEmitter Base Voltage VEBO 5 VCollector Current IC 1.5 A0.5 Ptot W Total Power Dissipation11) Junction Temperature TJ 150 Storage Temperature Range TStg -

 9.8. Size:195K  globaltech semi
gst2sc3838.pdf

ST2SC2073U
ST2SC2073U

GST2SC3838 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 11V amplifier and switch. Collector Current : 50mA Lead(Pb)-FreePackages & Pin Assignments GST2SC3838F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GST

 9.9. Size:371K  globaltech semi
gst2sc1383.pdf

ST2SC2073U
ST2SC2073U

GST2SC1383 Series NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V (2SC1383) amplifier and switch. 50V (2SC1384) Collector Current : 1.0A Lead(Pb)-FreePackages & Pin Assignments TO-92MOD Pin Description1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Ma

 9.10. Size:473K  globaltech semi
gst2sc3356.pdf

ST2SC2073U
ST2SC2073U

GST2SC3356 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Low noise amplifier at VHF, UHF and CATV amplifier and switch. band Low Noise and High Gain High Power Gain Lead(Pb)-FreePackages & Pin Assignments GST2SC3356F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Informati

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