Биполярный транзистор LMBTA05LT1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: LMBTA05LT1G
Маркировка: 1H
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT23
Аналоги (замена) для LMBTA05LT1G
LMBTA05LT1G Datasheet (PDF)
lmbta05lt1g lmbta06lt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsFEATURESLMBTA05LT1G We declare that the material of productcompliance with RoHS requirements.LMBTA06LT1G S- Prefix for Automotive and Other Applications Requiring S-LMBTA05LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA06LT1GMAXIMUM RATINGSValue3Rating Symbol LMBTA05 LMBT
lmbta05lt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsLMBTA05LT1GFEATURES We declare that the material of productLMBTA06LT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring S-LMBTA05LT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBTA06LT1GQualified and PPAP Capable.MAXIMUM RATINGSValue3Rating Symbol LMBTA05 LMBTA0
lmbta06lt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsFEATURESLMBTA05LT1G We declare that the material of productcompliance with RoHS requirements.LMBTA06LT1G S- Prefix for Automotive and Other Applications Requiring S-LMBTA05LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA06LT1GMAXIMUM RATINGSValue3Rating Symbol LMBTA05 LMBT
lmbta06ut1g.pdf
LESHAN RADIO COMPANY, LTD.Dual Driver TransistorsNPN/PNP Duals LMBTA05UT1GLMBTA06UT1GFEATURES We declare that the material of product S-LMBTA05UT1Gcompliance with RoHS requirements.S-LMBTA06UT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.MAXIMUM RATINGSValueRating Sy
lmbta06wt1g.pdf
LESHAN RADIO COMPANY, LTD.Driver TransistorsFEATURESLMBTA05WT1G We declare that the material of productLMBTA06WT1Gcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring S-LMBTA05WT1GUnique Site and Control Change Requirements; AEC-Q101 S-LMBTA06WT1GQualified and PPAP Capable.MAXIMUM RATINGSValue3Rating Symbol LMBTA05 LMBT
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050