NSVDTA113EM3T5G - аналоги и даташиты биполярного транзистора

 

NSVDTA113EM3T5G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NSVDTA113EM3T5G
   Маркировка: 7E
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 1 kOhm
   Встроенный резистор цепи смещения R2 = 1 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.26 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 3
   Корпус транзистора: SOT723

 Аналоги (замена) для NSVDTA113EM3T5G

 

NSVDTA113EM3T5G Datasheet (PDF)

 0.1. Size:110K  onsemi
nsvdta113em3t5g.pdfpdf_icon

NSVDTA113EM3T5G

MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

 6.1. Size:156K  onsemi
nsvdta114eet1g.pdfpdf_icon

NSVDTA113EM3T5G

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 6.2. Size:156K  onsemi
nsvdta114em3t5g.pdfpdf_icon

NSVDTA113EM3T5G

MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

 6.3. Size:99K  onsemi
nsvdta115eet1g.pdfpdf_icon

NSVDTA113EM3T5G

MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 Digital Transistors (BRT) R1 = 100 kW, R2 = 100 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains

Другие транзисторы... NSVMMBT5401LT3G , NSVMMBT5401WT1G , NSVMMBT589LT1G , NSVMMBT6429LT1G , NSVMMBT6517LT1G , NSVMMBT6520LT1G , NSVMMBTA05LT1G , NSVMMBTH10LT1G , A42 , NSVDTA114EET1G , NSVDTA114EM3T5G , NSVDTA115EET1G , NSVDTA123EM3T5G , NSVDTA143ZET1G , NSVDTA144EET1G , NSVDTA144WET1G , NSVDTC113EM3T5G .

History: INA5008AH1 | BDX28

 

 
Back to Top

 


 
.