All Transistors. SCR. МДТ9-3-200-12 Datasheet

 

МДТ9-3-200-12 SCR-module DATASHEET

МДТ9-3-200-12 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum average on-state current (IT(AVR)): 250 A
   Maximum RMS on-state current (IT(RMS)): 392 A
   Non repetitive surge peak on-state current (ITSM): 7150 A
   Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 0.74 K/W
   Junction to case thermal resistance (RTH(j-c)): 0.1 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 1.5 V
   Triggering gate current (IGT): 180 mA
   Holding current (IH): 160 mA

 

МДТ9-3-200-12 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

МДТ9-3-200-12 Datasheet

Page #1

МДТ9-3-200-12
 datasheet

Page #2

МДТ9-3-200-12
 datasheet #2

Description

Ìîäóëè òèðèñòîðíûå è êîìáèíèðîâàííûå ÌÎÄÓËÈ ÒÈÐÈÑÒÎÐÍÛÅ È ÊÎÌÁÈÍÈÐÎÂÀÍÍÛÅ ÌTT9/3-200, ÌTT9/3-250 ÌTÄ9/3-200, ÌTÄ9/3-250 ÌÄÒ9/3-200, ÌÄÒ9/3-250 сняты с производства, рекомендуется заменить на МТТ10/3 Ìîäóëè òèðèñòîðíûå è êîìáèíèðîâàííûå ñîñòîÿò èç äâóõ ñèëîâûõ ïîëóïðîâîäíèêîâûõ ýëåìåíòîâ:

 
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