МДТ9-3-200-5 SCR-module DATASHEET
МДТ9-3-200-5 ELECTRICAL SPECIFICATIONS
Type: SCR-module
Maximum repetitive peak and off-state voltage (VDRM): 1800 V
Maximum average on-state current (IT(AVR)): 400 A
Maximum RMS on-state current (IT(RMS)): 630 A
Non repetitive surge peak on-state current (ITSM): 11000 A
Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 0.69 K/W
Junction to case thermal resistance (RTH(j-c)): 0.06 K/W
Triggering gate voltage (VGT): 2.5 V
Peak on-state voltage drop (VTM): 1.8 V
Triggering gate current (IGT): 250 mA
Holding current (IH): 300 mA
МДТ9-3-200-5 Datasheet
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Description
Ìîäóëè òèðèñòîðíûå è êîìáèíèðîâàííûå ÌÎÄÓËÈ ÒÈÐÈÑÒÎÐÍÛÅ È ÊÎÌÁÈÍÈÐÎÂÀÍÍÛÅ ÌTT9/3-200, ÌTT9/3-250 ÌTÄ9/3-200, ÌTÄ9/3-250 ÌÄÒ9/3-200, ÌÄÒ9/3-250 сняты с производства, рекомендуется заменить на МТТ10/3 Ìîäóëè òèðèñòîðíûå è êîìáèíèðîâàííûå ñîñòîÿò èç äâóõ ñèëîâûõ ïîëóïðîâîäíèêîâûõ ýëåìåíòîâ:
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |